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Alexander Alexewicz

Dipl.-Phys., Dr. techn.
Patentanwalt (seit
2019
)
European Patent and Trademark Attorney


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Ausbildung

Studium der Physik an der Westfälischen Wilhelms-Universität Münster und der Université Paris-Sud (Paris-XI). Promotion im Bereich der Festkörperelektronik an der Technischen Universität Wien.

Schwerpunkte

Patent- und Gebrauchsmusterrecht (insbesondere in den Gebieten Computer-implementierte Erfindungen und Software, Elektronik und Halbleitertechnik), Markenrecht.

Arbeitssprachen

Deutsch, Englisch, Französisch

Publikationen
  • M. Capriotti, A. Alexewicz, C. Fleury, M. Gavagnin, O. Bethge, D. Visalli, J. Derluyn, H. D. Wanzenböck, E. Bertagnolli, D. Pogany, G. Strasser: “Fixed interface charges between AlGaN barrier and gate stack composed of in-situ-grown SiN and Al2O3in AlGaN/GaN high electron mobility transistors with normally off capability”; Applied Physics Letters, 104 (2014), 1135021.
     
  • R. A. Yankov, A. Kolitsch, J. von Borany, F. Munnik, S. Gemming, A. Alexewicz, H. Bracht, H. Rösner, A. Donchev, M. Schütze: “Microstructural Studies of Fluorine-Implanted Titanium Aluminides for Enhanced Environmental Durability”; Advanced Engineering Materials, 16 (2014),52.
     
  • A. Alexewicz, M. Alomari, D. Maier, H. Behmenburg, C. Giesen, M. Heuken, D. Pogany, E. Kohn, G. Strasser: “Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation”; Solid-State Electronics, 89 (2013), 207.
     
  • A. Alexewicz, C. Ostermaier, C. Henkel, O. Bethge, J. F. Carlin, L. Lugani, N. Grandjean, E. Bertagnolli, D. Pogany, G. Strasser: “Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates”; Thin Solid Films, 520 (2012), 6230.
     
  • K. Čičo, D. Gregušova, J. Kuzmík, M. Jurkovič, A. Alexewicz, M. Poisson, D. Pogany, G. Strasser, S. Delage, K. Fröhlich: “Influence of processing and annealing steps on electrical properties of In-AlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation”; Solid-State Electronics, 67 (2012), 74.
     
  • J. Kuzmík, S. Vitanov, C. Dua, J. F. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: “Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors”; Japanese Journal of Applied Physics, 51 (2012), 054102-1.
     
  • P. Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Würfl, G. Strasser, D. Pogany: “Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors”; Applied Physics Letters, 100 (2012), 1435071.
     
  • C. Ostermaier, P. Lagger, M. Alomari, P. Herfurth, D. Maier, A. Alexewicz, M. Poisson, S. Delage, G. Strasser, D. Pogany, E. Kohn: “Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure”; Microelectronics Reliability, 52 (2012), 1812.
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