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Alexander Alexewicz

Dipl.-Phys. (physicist), Dr. techn.
Patent attorney (since
European Patent and Trademark Attorney

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Physics studies at the University of Muenster and the University of Paris-Sud (Paris-XI). Doctoral thesis in the field of solid state electronics at the Vienna University of Technology.

Main focus

Patent and utility model law (in particular in the fields of computer implemented inventions and software, electronics and semiconductor technology), trademark law.

Working languages

German, English, French

  • M. Capriotti, A. Alexewicz, C. Fleury, M. Gavagnin, O. Bethge, D. Visalli, J. Derluyn, H. D. Wanzenböck, E. Bertagnolli, D. Pogany, G. Strasser: “Fixed interface charges between AlGaN barrier and gate stack composed of in-situ-grown SiN and Al2O3in AlGaN/GaN high electron mobility transistors with normally off capability”; Applied Physics Letters, 104 (2014), 1135021.
  • R. A. Yankov, A. Kolitsch, J. von Borany, F. Munnik, S. Gemming, A. Alexewicz, H. Bracht, H. Rösner, A. Donchev, M. Schütze: “Microstructural Studies of Fluorine-Implanted Titanium Aluminides for Enhanced Environmental Durability”; Advanced Engineering Materials, 16 (2014),52.
  • A. Alexewicz, M. Alomari, D. Maier, H. Behmenburg, C. Giesen, M. Heuken, D. Pogany, E. Kohn, G. Strasser: “Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation”; Solid-State Electronics, 89 (2013), 207.
  • A. Alexewicz, C. Ostermaier, C. Henkel, O. Bethge, J. F. Carlin, L. Lugani, N. Grandjean, E. Bertagnolli, D. Pogany, G. Strasser: “Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates”; Thin Solid Films, 520 (2012), 6230.
  • K. Čičo, D. Gregušova, J. Kuzmík, M. Jurkovič, A. Alexewicz, M. Poisson, D. Pogany, G. Strasser, S. Delage, K. Fröhlich: “Influence of processing and annealing steps on electrical properties of In-AlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation”; Solid-State Electronics, 67 (2012), 74.
  • J. Kuzmík, S. Vitanov, C. Dua, J. F. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: “Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors”; Japanese Journal of Applied Physics, 51 (2012), 054102-1.
  • P. Marko, A. Alexewicz, O. Hilt, G. Meneghesso, E. Zanoni, J. Würfl, G. Strasser, D. Pogany: “Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors”; Applied Physics Letters, 100 (2012), 1435071.
  • C. Ostermaier, P. Lagger, M. Alomari, P. Herfurth, D. Maier, A. Alexewicz, M. Poisson, S. Delage, G. Strasser, D. Pogany, E. Kohn: “Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure”; Microelectronics Reliability, 52 (2012), 1812.
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